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This resist was designed and developed for line formation. It is used in a wide range of applications including metal and implant applications.
TDUR™-P3435
Conditions
Substrate Si with HMDS
Resist Thickness 250nm; (Nf:1.56 at 633nm) / 190nm; (Nf:1.56 at 633nm)
Pre-bake 100℃, 60sec
TARC TARC 44nm (RI=1.44 at 633nm)
TARC Bake 60℃, 60sec
Exposure KrF stepper (NA: 0.75, σ: 0.60)
P.E.B 110℃, 60sec
Reticle TOK-248-010 (6% half tone)
Development NMD-3 2.38%, 23℃, 60sec, LD nozzle
Post-bake 100℃, 60sec
Target Target CD: 150nm line (Mask: 150nm, Pitch: 330nm)
TDUR-P4197T PM
Substrate BARC
Film Thickness 430nm(R.I.:1.56@633nm)
Pre-bake 90℃, 60sec
Exposure KrF stepper (NA: 0.75, σ: 2/3 annular)Mask TOK Reticle (HT 6%)
P.E.B 110℃, 60s
Development NMD-3 2.38%, 60s, Paddle
