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G- and I-Line Resist

General Purpose G- and I-Line Resists for Semiconductors and MEMS

We offer both positive and negative resists for g-, h-, and i-line projection exposure with long wavelengths as well as for high NA g- and i-line stepper exposure systems. We offer a wide range of resists, including thick film types, high-sensitivity types, dye-infused types for high-reflection substrates such as polysilicon and tungsten wiring, etc. The following is a list of our representative products. Please feel free to contact us for regarding these or additional types of products.

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I-Line Resist Lineup

G-Line Resist

We offer a wide range of resists, including thick film types, high-sensitivity types, dye-infused types for high-reflection substrates such as polysilicon and tungsten wiring, etc. The following is a list of our representative products. Please feel free to contact us for regarding these or additional types of products.

Substrate Bare-Si (HMDS coated)

Film thickness 1.26μm

Pre-bake　：90℃, 90sec (110℃, 90sec /no post exposure bake)

Exposure: g-line stepper (NA: 0.54)

Post Exposure: 110℃, 90sec

Bake (P.E.B.) alternatively, no P.E.B.)

Development: NMD-3 2.38%, 60sec

Post-bake: 110℃, 90sec (proximity)