HOÁ CHẤT CÔNG NGHIỆP ĐIỆN TỬ

1. 

   Galden® PFPE thermal fluids

   Galden® is available as heat transfer fluid, test fluid, solvent and vapor phase solder. Galden® heat transfer fluids Galden® HT PFPE fluids designed to manage very high and low temperature applications. Galden® HT PFPE fluids offer a wide range of operating temperatures from -70°C to 290°C. Heat transfer processes can be accurately... Xem thêm

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2. 

   i-Line, g-Line and Broadband

   Product Lineup Advanced i-Line Resists for Non-reflective SubstratesResist families designed for demanding critical CD (<350 nm) printing on non-reflective substrates : OiR 620 series OiR 674 series Advanced i-Line Resists for Reflective SubstratesResist series offering fast photospeed options for advanced resolution (>350 nm CD) patterning on reflective substrates : OiR 674 series GiR 1102 series Multi-purpose High... Xem thêm

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3. 

   NIL (Nanoimprint Lithography)

   NIL materials for semiconductor lithography process. UV curable resist for nanoimprint lithography (NIL) that contributes to cost reduction and power saving in advanced semiconductor manufacturing.Adhesion agent for NIL that provides adhesion between substrate and resist to prevent loss of circuit patterns transferred onto the resist when the mask is peeled off... Xem thêm

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4. 

   EUV (13.5nm)

   EUV materials for negative tone imaging Product Lineup EUV NTI CAR EUV NTI developer DP819A Features & Benefits PAG connected photo decomposable quencher (PCP) with a reaction control function of the resist is introduced. By maintaining a uniform acid concentration in the film during exposure, the LWR, which has been a problem with conventional... Xem thêm

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5. 

   Positive KrF Resist for Lines TDUR™-P3435 / TDUR-P4197T PM

   This resist was designed and developed for line formation. It is used in a wide range of applications including metal and implant applications. TDUR™-P3435 Conditions Substrate  Si with HMDS Resist Thickness  250nm; (Nf:1.56 at 633nm)　/　190nm; (Nf:1.56 at 633nm) Pre-bake   100℃, 60sec TARC  TARC 44nm (RI=1.44 at 633nm) TARC Bake  60℃, 60sec Exposure   KrF stepper (NA: 0.75, σ: 0.60) P.E.B ... Xem thêm

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6. 

   Thick Layer Photoresist For Plating - JSR ELPAC™ THB™ series

   RDL / Fine RDLFT : 5~15 μmPlating : Cu  C4 / μ-BumpFT : 20~100 μmPlating : Cu / Ni / SnAgHigh Cu pillarFT : >100 μmPlating : Cu Cu Fine RDLProduct Line upThick Layer Photoresist For PlatingJSR ELPAC™ THB™ series 350   250   100   80   40   30   15   5Negative ToneHigh Cu PillarAfter Development After Cu... Xem thêm

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7. 

   Photo-Imageable Dielectric (PID) - JSR ELPAC™ WPR™ / FG series

   JSR ELPAC™ WPR Series / PFAS Free   PI Series / PFAS FreeCommon Features   Positive-tone✔Photo-sensitivity for ghi-line✔Ideal taper profileNegative-tone✔Thick patterning✔Low warpagePositive-tone✔High Resolution✔Low cure temperature (≦200 °C)✔Good elongation (>60%)✔High Tg (330 °C)Negative-tone✔Dry film for advanced substrate✔Low CTE (31 ppm/K)✔Good Cu peel strength (0.4 N/mm)FT = 2~3 µmPhoto-Imageable Dielectric (PID)JSR ELPAC™ WPR™ /... Xem thêm

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8. 

   Silicon Wafers & Compound Semiconductors

   Special crystal growing methods are used to melt polycrystalline silicon and then convert to a large single-crystal round ingot, having perfect atomic structure. These crystals can be 300mm in diameter and longer than one meter. A silicon wafer is produced by slicing these ingots, followed by shaping and polishing processes.... Xem thêm

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